2017年3月8日星期三

TPC8110 Field Effect Transistor Silicon P Channel MOS Type

TPC8110 Field Effect Transistor Silicon P Channel MOS Type

Model Number: TPC8110

Package: SOP-8

Brand Name: TOSHIBA

























• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −40 V)
• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

























Part StatusObsolete 
FET TypeP-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)40V 
Current - Continuous Drain (Id) @ 25°C8A (Ta) 
Vgs(th) (Max) @ Id2V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V 
Input Capacitance (Ciss) (Max) @ Vds2180pF @ 10V 
FET Feature- 
Power Dissipation (Max)1W (Ta) 
Rds On (Max) @ Id, Vgs25 mOhm @ 4A, 10V 
Operating Temperature150°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device Package8-SOP (5.5x6.0)

Contact Way
Name: Fanny Young
Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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