2018年11月22日星期四

MT29F4G08ABBDAH4-AITX Micron 4Gb,8Gb,16Gb:x8,x16 NAND Flash Memory Features

MT29F4G08ABBDAH4-AITX Micron 4Gb,8Gb,16Gb:x8,x16 NAND Flash Memory Features

Part Number: MT29F4G08ABBDAH4-AITX

Brand: MICRON

Package:  BGA






































Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
16Gb: 16,384 blocks
• Asynchronous I/O performance

tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/Busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: Write protect entire device
• First block (block address 00h) is valid when shipped
from factory with ECC. For minimum required
ECC, see Error Management.
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles
are less than 1000
• RESET (FFh) required as first command after power-on
• Alternate method of device initialization (Nand_Init)
after power up (contact factory)
• Internal data move operations supported within the
plane from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
• Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA

Part StatusActive 
Memory TypeNon-Volatile 
Memory FormatFLASH 
TechnologyFLASH - NAND 
Memory Size4Gb (512M x 8) 
Write Cycle Time - Word, Page- 
Memory InterfaceParallel 
Voltage - Supply1.7 V ~ 1.95 V 
Operating Temperature-40°C ~ 85°C (TA) 
Mounting TypeSurface Mount 
Package / Case63-VFBGA 
Supplier Device Package63-VFBGA (9x11)

[Delivery Term] 
1. We will ship all your order within 3 working days after receiving your payment. Otherwise, we will state it in the invoice in advance.
2. We can Ship via your shipping account (DHL / FEDEX / UPS / TNT or others) as your instruction. Or Ship via our shipping account (We have good relationship with DHL and FEDEX with very special freight).
3. Regarding the declared value on the package for customs clearance, we are pleased to follow your wishes, just feel free to inform us when ordering.
4. Any import fees or charges are the buyer responsibility.

[Refund & Replacement]
You will receive a 30-360 days form, fit, and function of part warranty to make sure you receive exactly what you ordered.

[Buying Excess & Surplus excess stocks of Electronic Components]
MICROCHIP semiconductor purchase the excess and surplus stocks inventory.
Contact Type

Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376
Wechat: chenxiaoqing_whxhnhl

Website:

没有评论:

发表评论