Part Number: PSMN7R5-30YLD
Brand: NXP
Package: LFPAK56, Power-SO8
Features and benefits
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
• Wave solderable; exposed leads for optimal visual solder inspection
| Part Status | Active | |
|---|---|---|
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 655pF @ 15V | |
| FET Feature | - | |
| Power Dissipation (Max) | 34W (Tc) | |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 15A, 10V | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | LFPAK56, Power-SO8 | |
| Package / Case | SC-100, SOT-669 |
Contact Type
Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376
Website:
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